Tunnel Diode:
A normal p-n junction diode exhibits doping concentration of about 1 part in 10⁸ (1 dopant atom in 10⁸ Si or Ge atoms). If the doping level is further increased, say about 1 part in 10³, we see the change in characteristics of diode. As a result, the depletion layer gets very narrow. In comparison with the conventional diode, the depletion layer of tunnel diode is 100 times narrower.
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https://electricalvoice.com/tunnel-diode-symbol-working-applications
4November 11, 2020 23.6K 4
